STP80NS04Z n - channel clamped 7.5m w - 80a - to-220 fully protected mesh overlay ? mosfet n typical r ds(on) = 0.0075 w n 100% avalanche tested n low capacitance and gate charge n 175 o c maximum junction temperature description this fully clamped mosfet is produced by using the latest advanced companys mesh overlay process which is based on a novel strip layout. the inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. any other application requiring extra ruggedness is also recommended. applications n abs, solenoid drivers n motor control n dc-dc converters ? internal schematic diagram july 1998 1 2 3 to-220 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) clamped v v dg drain- gate voltage clamped v v gs gate-source voltage clamped v i d drain current (continuous) at t c = 25 o c80a i d drain current (continuous) at t c = 100 o c60a i dg drain gate current (continuous) 50 ma i gs gate source current (continuous) 50 ma i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25 o c160w derating factor 1.06 w/ o c v esd (g-s) gate-source esd (hbm - c= 100pf, r=1.5 k w ) 2kv v esd (g-d) gate-drain esd (hbm - c= 100pf, r=1.5 k w ) 4kv v esd (d-s) drain-source esd (hbm - c= 100pf, r=1.5 k w ) 4kv t stg storage temperature -65 to 175 o c t j max. operating junction temperature -40 to 175 o c type v dss r ds(on) i d STP80NS04Z clamped <0.008 w 80 a 1/8
thermal data r thj-case r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-case typ thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.94 0.65 62.5 0.5 300 o c/w o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 30 v) 500 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v clamp drain-gate breakdown voltage i d = 1 ma v gs = 0 -40 < t j < 175 o c 34 v i dss zero gate voltage drain current (v gs = 0) v ds = 16 v t j = 175 o c50 m a i gss gate-body leakage current (v ds = 0) v gs = 10 v t j = 175 o c v gs = 16 v t j = 175 o c 50 150 ma ma v gss gate-source breakdown voltage i g = 100 m a 18 v on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 1 ma -40 < t j < 150 o c 1.7 3 4.2 v r ds(on) static drain-source on resistance v gs = 10v i d = 40 a v gs = 16v i d = 40 a 8 7.5 9 8 m w m w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =40 a 30 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 4000 1250 230 5400 1700 320 pf pf pf STP80NS04Z 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 16 v i d = 80 a v gs = 10 v 105 24 41 142 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 30 v i d = 80 a r g =4.7 w v gs = 10 v (see test circuit, figure 5) 60 140 220 80 190 300 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd ( * ) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100 a/ m s v r = 25 v t j = 150 o c (see test circuit, figure 5) 75 0.21 6 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STP80NS04Z 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STP80NS04Z 4/8
normalized gate threshold voltage vs temperature zero gate voltage drain current vs temperature normalized on resistance vs temperature source-drain diode forward characteristics STP80NS04Z 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STP80NS04Z 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP80NS04Z 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rig hts of stmicroelectroni cs. spe cification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. st microelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of s tmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STP80NS04Z 8/8
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